Planarizing ladder-type silsesquioxane polymer insulation layer

Details Planarizing ladder-type silsesquioxane polymer insulation layer Planarizing ladder-type silsesquioxane polymer insulation layer

1988-11-28

1991-01-01

Chaudhuri, Olik

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

437235, 437243, H01L 2156, H01L 2147

Patent

active

049815300

ABSTRACT:
An improved insulation layer is formed by first preparing a solution by reacting water with an aminoalkoxysilane monomer in a solvent, using a critical mole ratio of water/monomer. After a sufficient aging period, the solution is coated onto a suitable surface, e.g. the surface of a semiconductor device, and then cured, in an essentially oxygen-free atmosphere, to a ladder-type silsesquioxane polymer. The insulation layer demonstrates excellent planarizing characteristics, while also exhibiting enhanced crack-resistance.

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