Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-03
2007-04-03
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S389000, C438S561000, C438S700000, C257SE21551
Reexamination Certificate
active
11009616
ABSTRACT:
A method of manufacturing a semiconductor device includes providing a substrate having first and second main surfaces. The substrate has a heavily doped region of a first conductivity at the second main surface and has a lightly doped region of the first conductivity at the first main surface. The method includes providing trenches and mesas in the substrate, implanting, at an angle, a dopant of the first conductivity into a sidewall of a mesa and implanting, at an angle, a dopant of a second conductivity into the mesa at another sidewall. The method includes oxidizing the sidewalls and bottoms of each trench and tops of the mesas to create a top oxide layer, etching back the top oxide layer to expose a portion of the mesa, depositing an oxide layer to cover the etched back top layer and mesa and planarizing the top surface of the device.
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Akin Gump Strauss Hauer & Feld & LLP
Estrada Michelle
Third Dimension (3D) Semiconductor, Inc.
Tobergte Nicholas J.
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