Planarization method for multi-layer lithography processing

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C438S760000

Reexamination Certificate

active

07455955

ABSTRACT:
The present invention is directed towards contact planarization methods that can be used to planarize substrate surfaces having a wide range of topographic feature densities for lithography applications. These processes use thermally curable, photo-curable, or thermoplastic materials to provide globally planarized surfaces over topographic substrate surfaces for lithography applications. Additional coating(s) with global planarity and uniform thickness can be obtained on the planarized surfaces. These inventive methods can be utilized with single-layer, bilayer, or multi-layer processing involving bottom anti-reflective coatings, photoresists, hardmasks, and other organic and inorganic polymers in an appropriate coating sequence as required by the particular application. More specifically, this invention produces globally planar surfaces for use in dual damascene and bilayer processes with greatly improved photolithography process latitude. The invention further provides globally planar surfaces to transfer patterns using imprint lithography, nano-imprint lithography, hot-embossing lithography and stamping pattern transfer techniques.

REFERENCES:
patent: 4515828 (1985-05-01), Economy et al.
patent: 5434107 (1995-07-01), Paranjpe
patent: 5605867 (1997-02-01), Sato et al.
patent: 5650261 (1997-07-01), Winkle
patent: 5679610 (1997-10-01), Matsuda et al.
patent: 5736424 (1998-04-01), Prybyla et al.
patent: 5756256 (1998-05-01), Nakato et al.
patent: 5935762 (1999-08-01), Dai et al.
patent: 5967030 (1999-10-01), Blalock
patent: 5985524 (1999-11-01), Allen et al.
patent: 6044851 (2000-04-01), Grieger et al.
patent: 6048799 (2000-04-01), Prybyla
patent: 6062133 (2000-05-01), Blalock
patent: 6331488 (2001-12-01), Doan et al.
patent: 6391798 (2002-05-01), DeFelice et al.
patent: 6407006 (2002-06-01), Levert et al.
patent: 6544466 (2003-04-01), Westmoreland
patent: 6580172 (2003-06-01), Mancini et al.
patent: 6610593 (2003-08-01), Kohl et al.
patent: 6716767 (2004-04-01), Shih et al.
patent: 6743724 (2004-06-01), Doan et al.
patent: 6797607 (2004-09-01), Endisch et al.
patent: 7082876 (2006-08-01), Olsson
patent: 2002/0093122 (2002-07-01), Choi et al.
patent: 2004/0029041 (2004-02-01), Shih et al.
patent: 2004/0040844 (2004-03-01), Chang et al.
patent: 2006/0249723 (2006-11-01), Doan et al.
patent: 0 388 862 (1990-09-01), None
Introduction to Microlithography, Second edition, edited by Larry F. Thompson, C. Grant Wilson, and Murrae J. Bowden, ACS Professional Reference Book, American Chemical Society, Washington, DC 1994, pp. 232-239, pp. 347-348, and pp. 356-361.
“Dual-Damascene Interconnects” in “Silicon Processing for the VLSI Era, vol. 4: Deep Submicron Process Technology”, Stanley Wolf, Lattice Press, Sunset Beach,California, 2002, Ch. 15, pp. 671-710.
César M. Garza, Jeffrey D. Byers, Lewis flanagin, and Maureen Hanratty, “Phtoresist Materials and Processing” in “Handbook of Semiconductor manufacturing Technology”, edited by Yoshio Nishi and Robert Doering, Marcel Dekker, Inc., New York City, New York, 2000, pp. 528-537.
SC Solutions; Chemical Mechanical Planarization (CMP), http://www.scsolutions.com/cmp.htm, 4 pages.
Tech Brief—Chemical Mechanical Planarization (CMP), 2003 IC Knowledge, 1 page.
Colburn, M. et al., “Step and Flash Imprint Lithography: A New Approach to High-Resolution Patterning,” Proceedings of the SPIE Conference on Emerging Lithographic Technologies, Santa Clara, California, Mar. 15, 1999, vol. 3676, pp. 379-389.

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