Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With resistive region connecting separate sections of device
Reexamination Certificate
2008-07-01
2008-07-01
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With resistive region connecting separate sections of device
C257S358000, C257S379000, C257S516000, C257S536000, C257SE29176
Reexamination Certificate
active
07394110
ABSTRACT:
Resistors that avoid the problems of miniaturization of semiconductor devices and a related method are disclosed. In one embodiment, a resistor includes a planar resistor material that extends vertically within at least one metal layer of a semiconductor device. In another embodiment, a resistor includes a resistor material layer extending between a first bond pad and a second bond pad of a semiconductor device. The two embodiments can be used alone or together. A related method for generating the resistors is also disclosed.
REFERENCES:
patent: 4695853 (1987-09-01), Hackleman et al.
patent: 5899724 (1999-05-01), Dobuzinsky et al.
patent: 6144144 (2000-11-01), Cleeves et al.
patent: 6512263 (2003-01-01), Yuan et al.
patent: 6580130 (2003-06-01), Schoellkopf et al.
patent: 2002/0020879 (2002-02-01), Shiiki et al.
Coolbaugh Douglas D.
Dalton Timothy J.
Edelstein Daniel C.
Eshun Ebenezer E.
Gambino Jeffrey P.
Hoffman Warnick LLC
International Business Machines - Corporation
Jaklitsch Lisa U.
Sefer A.
Wilson Scott R
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