Planar substrate devices integrated with FinFETs and method...

Details Planar substrate devices integrated with FinFETs and method... Planar substrate devices integrated with FinFETs and method...

2008-05-06

2008-05-06

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S157000, C438S228000, C257SE21014

Reexamination Certificate

active

11200271

ABSTRACT:
A planar substrate device integrated with fin field effect transistors (FinFETs) and a method of manufacture comprises a silicon-on-insulator (SOI) wafer comprising a substrate; a buried insulator layer over the substrate; and a semiconductor layer over the buried insulator layer. The structure further comprises a FinFET over the buried insulator layer and a field effect transistor (FET) integrated in the substrate, wherein the FET gate is planar to the FinFET gate. The structure further comprises retrograde well regions configured in the substrate. In one embodiment, the structure further comprises a shallow trench isolation region configured in the substrate.

REFERENCES:
patent: 6252284 (2001-06-01), Muller et al.
patent: 6770516 (2004-08-01), Wu et al.
patent: 7074623 (2006-07-01), Lochtefeld et al.
patent: 2003/0141569 (2003-07-01), Fried et al.
patent: 2003/0193058 (2003-10-01), Fried et al.
patent: 2004/0108559 (2004-06-01), Sugii et al.
patent: 2005/0003592 (2005-01-01), Jones

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