Planar multi-layer metal bonding pad

Details Planar multi-layer metal bonding pad Planar multi-layer metal bonding pad

1992-05-29

1994-02-15

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

257734, 257736, 257748, 257750, 257752, 257758, 257759, 257760, 257774, H01L 2348, H01L 2940, H01L 2952, H01L 2946

Patent

active

052870022

ABSTRACT:
A planarized multi-layer metal bonding pad. A first metal bonding pad layer (13) that defines a metal bonding pad is provided. A first dielectric layer (14) is provided with a multitude of vias (17) that covers the first metal bonding pad layer (13), thereby exposing portions of the first metal bonding pad layer (13) through the multitude of vias (17) in the first dielectric (14). A second metal bonding pad layer (18) that further defines the metal bonding pad is deposited on the first dielectric layer (14) making electrical contact to the first metal bonding pad layer through the multitude of vias (17). Planarization of the second metal bonding pad layer (18) is achieved by having the second metal bonding pad layer (18) cover the first dielectric layer (14) and making contact through the vias (17).

REFERENCES:
patent: 4755482 (1988-07-01), Nagakubo
patent: 4933303 (1990-06-01), Mo
patent: 5006486 (1991-04-01), Schucker
patent: 5063175 (1991-11-01), Broadbent

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