Pixel structure and method for manufacturing the same

Details Pixel structure and method for manufacturing the same Pixel structure and method for manufacturing the same

2011-03-01

2011-03-01

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S072000

Reexamination Certificate

active

07897449

ABSTRACT:
A method for manufacturing a pixel structure is provided. First, a first mask process is performed to form a patterned first metal layer on a substrate, wherein the patterned first metal layer includes a gate. Next, a second mask process is performed to form a patterned insulating layer and a patterned semiconductor layer over the gate, wherein the patterned insulating layer is disposed on the patterned first metal layer, and the patterned semiconductor layer is disposed on the patterned insulating layer. Then, a third mask process is performed to define a thin film transistor (TFT) and a pixel electrode connected thereto and to form a passivation layer to cover the TFT.

REFERENCES:
patent: 6818923 (2004-11-01), Kim et al.
patent: 6838696 (2005-01-01), Kobayashi et al.
patent: 7001796 (2006-02-01), Cho et al.
patent: 2009/0108280 (2009-04-01), Jan et al.
patent: 1632675 (2005-06-01), None

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