Pixel design to improve photodiode capacitance and method of...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S328000, C438S199000, C257SE21350, C257SE21360, C257SE27133

Reexamination Certificate

active

11086347

ABSTRACT:
A CMOS imager with two adjacent pixel active area regions without the presence of an intervening trench isolation region that typically separates two adjacent pixels and their associated photodiodes is provided. The shared active area region isolates the two adjacent photodiodes and provides good substrate to surface pinned layer contact without the presence of n− type dopant ions and due to the presence of p-type dopant ions. As a result, the size of the imager can be reduced and the photodiodes of the two adjacent pixels have increased capacitance.

REFERENCES:
patent: 5286990 (1994-02-01), Hynecek
patent: 6051447 (2000-04-01), Lee et al.
patent: 6140630 (2000-10-01), Rhodes
patent: 6204524 (2001-03-01), Rhodes
patent: 6310366 (2001-10-01), Rhodes et al.
patent: 6326652 (2001-12-01), Rhodes
patent: 6333205 (2001-12-01), Rhodes
patent: 6376868 (2002-04-01), Rhodes
patent: 6441412 (2002-08-01), Oh et al.
patent: 6706550 (2004-03-01), Lee et al.
patent: 2002/0045306 (2002-04-01), Watanabe
patent: 2002/0090748 (2002-07-01), Lee et al.
Definition of “Share”, Merriam-Webster Dictionary Online, http://m-w.com□□.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Pixel design to improve photodiode capacitance and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pixel design to improve photodiode capacitance and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pixel design to improve photodiode capacitance and method of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3773725

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.