Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-17
2007-07-17
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S328000, C438S199000, C257SE21350, C257SE21360, C257SE27133
Reexamination Certificate
active
11086347
ABSTRACT:
A CMOS imager with two adjacent pixel active area regions without the presence of an intervening trench isolation region that typically separates two adjacent pixels and their associated photodiodes is provided. The shared active area region isolates the two adjacent photodiodes and provides good substrate to surface pinned layer contact without the presence of n− type dopant ions and due to the presence of p-type dopant ions. As a result, the size of the imager can be reduced and the photodiodes of the two adjacent pixels have increased capacitance.
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Definition of “Share”, Merriam-Webster Dictionary Online, http://m-w.com□□.
Berezin Vladimir
Patrick Inna
Dickstein & Shapiro LLP
Estrada Michelle
Jefferson Quovaunda
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