Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-22
2011-03-22
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S221000, C438S328000, C438S424000, C438S761000, C438S778000
Reexamination Certificate
active
07910426
ABSTRACT:
An imager device that has an isolation structure such that pinned photodiode characteristics are maintained without increasing doping levels. The invention provides an isolation structure to maintain pinned photodiode characteristics without increasing doping levels around the photodiode. By creating a substrate region surrounding the charge-collection region of the photodiode, the photodiode may be electrically isolated from the bulk substrate. This region fixes the depletion region so that it does not migrate toward the surface of the substrate or the STI region. By doing so, the region prevents charge from being depleted from the substrate and the accumulation region, reducing dark current.
REFERENCES:
patent: 5241198 (1993-08-01), Okada et al.
patent: 5679597 (1997-10-01), Moon
patent: 5928960 (1999-07-01), Greco et al.
patent: 6046487 (2000-04-01), Benedict et al.
patent: 6225171 (2001-05-01), Yu et al.
patent: 6319787 (2001-11-01), Enders et al.
patent: 6570222 (2003-05-01), Nozaki et al.
patent: 6642087 (2003-11-01), Nozaki et al.
patent: 6794698 (2004-09-01), Perng et al.
patent: 6803581 (2004-10-01), Prince et al.
patent: 7201174 (2007-04-01), Fukiage
patent: 7235835 (2007-06-01), Nagano et al.
patent: 2001/0025970 (2001-10-01), Nozaki et al.
patent: 2002/0117731 (2002-08-01), Kim et al.
patent: 2003/0201479 (2003-10-01), Birner et al.
patent: 2004/0011379 (2004-01-01), Anaokar et al.
patent: 2004/0146655 (2004-07-01), Seidl et al.
patent: 2004/0178430 (2004-09-01), Rhodes et al.
patent: 2004/0232494 (2004-11-01), Nagano et al.
patent: 2004/0251481 (2004-12-01), Rhodes
patent: 2005/0042793 (2005-02-01), Mouli et al.
patent: 2005/0116275 (2005-06-01), Lin et al.
patent: 2007/0170541 (2007-07-01), Chui et al.
S.G. Sazonov et al.—“Charge properties of aluminum oxide layers synthesized by molecular layering,” Technical Physics Letters, vol. 24, No. 7, Jul. 1998, pp. 525-526.
N. Novkovski—“Breakdown and generation of interface states in oxynitride thin films on silicon,” Semiconductor Science and Technology 17, No. 2, Jan. 10, 2002, pp. 93-96.
Dickstein & Shapiro LLP
Garcia Joannie A
Micro)n Technology, Inc.
Richards N Drew
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