Pitch multiplied mask patterns for isolated features

Details Pitch multiplied mask patterns for isolated features Pitch multiplied mask patterns for isolated features

2010-06-10

2011-10-25

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S157000, C257SE21205, C257SE21626

Reexamination Certificate

active

08043915

ABSTRACT:
Crisscrossing spacers formed by pitch multiplication are used as a mask to form isolated features, such as contacts vias. A first plurality of mandrels are formed on a first level and a first plurality of spacers are formed around each of the mandrels. A second plurality of mandrels is formed on a second level above the first level. The second plurality of mandrels is formed so that they cross, e.g., are orthogonal to, the first plurality of mandrels, when viewed in a top down view. A second plurality of spacers is formed around each of the second plurality of mandrels. The first and the second mandrels are selectively removed to leave a pattern of voids defined by the crisscrossing first and second pluralities of spacers. These spacers can be used as a mask to transfer the pattern of voids to a substrate. The voids can be filled with material, e.g., conductive material, to form conductive contacts.

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