Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-01-28
2000-02-01
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438268, 438416, 438192, 438621, H01L 21336
Patent
active
060202394
ABSTRACT:
According to the present invention, a method for fabricating vertical circuit devices which include a body contact is disclosed. During the fabrication process, the body of a transistor is formed from a pillar of single crystal silicon. The silicon pillar is formed over a butted junction of N+ and P+ diffusions. This fabrication process results in a pillar structure which has an n+ diffusion contacting a portion of the base of the transistor body and a P+ diffusion contacting the remainder of the base of the transistor body. The proportion of N+ and P+ area at the base of the silicon pillar depends on the overlay of the opening to the butted junction. Gate oxide is grown over the entire pillar and a polysilicon gate material is then deposited and etched to form the transistor gate. Metal contact studs are formed, preferably via deposition. After fabrication, the entire surface of the device can be planarized by using any standard Chemical Mechanical Planarization (CMP) process.
REFERENCES:
patent: 4590664 (1986-05-01), Prentice et al.
patent: 5016067 (1991-05-01), Mori
patent: 5072276 (1991-12-01), Malhi et al.
patent: 5155054 (1992-10-01), Itoh
patent: 5283456 (1994-02-01), Hsieh et al.
patent: 5304831 (1994-04-01), Yilmaz et al.
patent: 5393999 (1995-02-01), Malhi
patent: 5517046 (1996-05-01), Hsing et al.
patent: 5583075 (1996-12-01), Ohzu et al.
patent: 5627390 (1997-05-01), Maeda et al.
patent: 5874760 (1999-02-01), Burns, Jr. et al.
patent: 5895273 (1999-04-01), Burns et al.
patent: 5914504 (1999-06-01), Augusto
Gambino Jeffrey Peter
Mandelman Jack Allan
Parke Stephen Anthony
Wordeman Matthew Robert
International Business Machines - Corporation
Murphy John
Niebling John F.
Shkurko Eugene I.
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