Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2010-04-13
2011-11-08
Wilson, Allan R (Department: 2815)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C257S415000, C257SE21352
Reexamination Certificate
active
08053266
ABSTRACT:
A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-Site, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.
REFERENCES:
patent: 5012671 (1991-05-01), Yagawara et al.
patent: 5908981 (1999-06-01), Atalar et al.
patent: 6211540 (2001-04-01), Takahashi et al.
patent: 6969630 (2005-11-01), Ozgur
patent: 7102467 (2006-09-01), Lutz et al.
patent: 7765681 (2010-08-01), Park et al.
patent: 2002/0192852 (2002-12-01), Scharf et al.
patent: 2003/0119221 (2003-06-01), Cunningham et al.
patent: 2005/0130360 (2005-06-01), Zhan et al.
patent: 2007/0287233 (2007-12-01), Zhan et al.
patent: 2009/0027763 (2009-01-01), Zhang et al.
Conley, Jr. John F.
Hartzell John W.
Schuele Paul J.
Zhan Changqing
Law Office of Gerald Maliszewski
Maliszewski Gerald
Sharp Laboratories of America Inc.
Wilson Allan R
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