Physical vapor deposition methods for forming...

Details Physical vapor deposition methods for forming... Physical vapor deposition methods for forming...

2008-06-17

2008-06-17

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000

Reexamination Certificate

active

07387962

ABSTRACT:
Copper-based metallization is formed in a trench on an integrated circuit substrate by forming a liner of refractory metal in the trench using physical vapor deposition, forming a copper plating seed layer on the liner using physical vapor deposition and then plating copper on the copper plating seed layer. Prior to plating copper on the copper plating seed layer, the liner and/or copper plating seed layer is stuffed with hydrogen, for example by exposing the liner and/or copper plating seed layer to a hydrogen-containing plasma during and/or after formation of the liner and/or copper plating seed layer. Related structures also are disclosed.

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Notice of Examination Report for Korean patent application No. 10-2008-0011167; date of mailing Dec. 7, 2006.
Yatsuda et al., “Quantitative Control of Plasma Surface Interactions for Highly Reliable Interconnects”,Proceedings of the IEEE 2004 International Interconnect Technology Conference, Jun. 7-9, 2004, pp. 90-92.

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