Photosensitive resin and method for patterning by use of the sam

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430326, 430330, G03F 730, G03F 740

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active

058663045

ABSTRACT:
The invention provides a photosensitive resin which includes polymer including a group which reacts with an acid to thereby convert a polarity thereof, a photo acid generator which is responsive to radial rays to thereby generate an acid, and a solvent in which the polymer and the photo acid generator is soluble. The polymer is a terpolymer represented by a following general formula (I) wherein n represents a positive integer ranging from 5 to 1000 both inclusive, R.sup.4 is a group selected from a group consisting of a tricyclodecanyl group, a dicydopentenyl group, a dicyclopentenyloxyethyl group, a cyclohexyl group, a norbonyl group, a norbornaneepoxy group, a norbornaneepoxymethyl group and an adamantyl group, R.sup.5 is a group selected from a group consisting of a tetrahydropyranyl group, a tetrahydrofuranyl group, a methyl group, an ethyl group, a propyl group, a tert-butyl group and 3-oxocyclohexyl group, and x+y+z=1 in which x is a variable in the range from 0.1 to 0.9 both inclusive, y is a variable in the range from 0.1 to 0.7 both inclusive, and z is a variable in the range from 0.01 to 0.7 both inclusive. ##STR1##

REFERENCES:
patent: 3772062 (1973-11-01), Shur
patent: 5372912 (1994-12-01), Allen et al.
patent: 5474872 (1995-12-01), Tomo et al.
patent: 5580694 (1996-12-01), Allen et al.
patent: 5580695 (1996-12-01), Murata et al.
Fujitsu Ltd, 93-397641, English Equivalent Abstract of JP-05-265212, Dated Oct. 15, 1993, From Derwent Information Ltd.
Kaimoto et al, 120:232105, English Equivalent Abstract of JP-05-265212 A2 Dated Oct. 15, 1993, From Chemical Abstracts, Amrican Chemical Society.
Nozaki et al, 121:241816, English Equivalent Abstract of JP 05-346668 A2. Dated Dec. 27, 1993, From Chemical Abstracts, American Chemical Society.
R. Allen et al., "Single Layer Resists with Enhanced Etch Resistance for 193 nm Lithography", Journal of Photopolymer Science and Technology, vol. 7, No. 3 (1994) pp. 507-516.
T. Ueno et al., "Chemical Amplification Positive Resist Systems Using Novel Sulfonates as Acid Generators", Proceedings of PME '89, 1990, pp. 413-424.
T. Neenan et al., "Chemically Amplified Resists: A Lithographic Comparison of Acid Generating Species," SPIE Proceedings, vol. 1086 (1989), pp. 2-10.
J. Crivello et al., "A New Preparation of Triarylsulfonium and -selenium Salts via the Copper(II)-Catalyzed Arylation of Sulfides and Selenides with Diaryliodonium Salts", J. Org. Chem., vol. 43, No. 15 (1978), pp. 3055-3058.
M. Rothschild et al., "A Review of Excimer Laser Projection Lithography", J. Vac. Sci. Technol., B 6(1), (1988), pp. 1-17.
S. Takechi et al., "Alicyclic Polymer for ArF and KrF Excimer Resist Based on Chemical Amplification", Journal of Photopolymer Science and Technology, vol. 5, No. 3 (1992), pp. 439-446.
M. Sasago et al., "ArF Excimer Laser Lithography (3) Evaluation of Resist", 35th Applied Physics Institution Conference Manuscripts, 1989, pp. 1p-K-4.
H. Ito et al., Applications of Photoinitiators to the Design of Resists for Semiconductor Manufacturing, Polymers in Electronics, 1984, pp. 11-23.
Ueno et al., "Short Wavelength Photoresist Material--Minuter Processing for ULSI", Bunshin Shuppan, publisher, 1988, pp. 4-21.

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