Photosensitive polymers, resist compositions comprising the...

Details Photosensitive polymers, resist compositions comprising the... Photosensitive polymers, resist compositions comprising the...

2005-02-01

2005-02-01

Walke, Amanda (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S326000, C430S910000, C526S281000, C526S320000, C526S321000

Reexamination Certificate

active

06849378

ABSTRACT:
A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer includes a comonomer having an acid-labile substituent group or a polar functional group, and a copolymer of alkyl vinyl ether and maleic anhydride. The copolymer is represented by the following structure:where k is an integer of 3 to 8, and where X is tertiary cyclic alcohol having 7 to 20 carbon atoms.

REFERENCES:
patent: 20010024763 (2001-09-01), Choi et al.
patent: 20030091928 (2003-05-01), Choi
“Implementation of the ArF resists based on VEMA for sub-100 nm device” (from the Proceedings of SPIE-The International Society for Optical Engineering, 4690 (Pt. 1, Advances in Resist Technology and Processing XIX), 533-540 (English) 2002. ISSN:0277-786X).

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