Photosensitive polymer having cyclic backbone and resist...

Details Photosensitive polymer having cyclic backbone and resist... Photosensitive polymer having cyclic backbone and resist...

1999-12-17

2001-09-11

Hamilton, Cynthia (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C526S282000, C526S309000, C526S266000

Reexamination Certificate

active

06287747

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a chemically amplified resist composition and, more particularly, to a photosensitive polymer whose backbone has a cyclic structure and to a resist composition containing the photosensitive polymer for an ArF excimer laser.
2. Description of the Related Art
As semiconductor devices become highly integrated and complicated to fabricate, fine pattern formation is required. Further, as the capacity of a semiconductor device increases to exceed 1 giga bit, a pattern size having a design rule of less than 0.2 &mgr;m is required. Accordingly, there are limitations in using a conventional resist material with a KrF excimer laser (248 nm). Thus, a new resist material capable of being developed using an ArF excimer laser (193 nm) has been developed in a lithography process.
(Meth)acrylate polymers are generally used as the resist material in the lithography process using the ArF excimer laser. However, such polymers have very weak resistance to dry etching. Accordingly, to increase the resistance to dry etching, a polymer having a backbone composed of an alicyclic compound such as an isobornyl group, an adamantyl group or a tricyclodecanyl group, is used. However, the resulting resist still exhibits weak resistance to dry etching.
SUMMARY OF THE INVENTION
To solve the above problems, it is a feature of the present invention to provide a photosensitive polymer whose backbone has a cyclic structure and contains an alicyclic compound, for obtaining sufficiently strong resistance to dry etching.
It is another feature of the present invention to provide a resist composition containing the photosensitive polymer, suitable for use in a lithography process using an ArF excimer laser.
In accordance with the present invention, there is provided a photosensitive polymer represented by the following formula:
where R
1
is a C
7
to C
20
alicyclic hydrocarbon compound, R
2
and R
4
independently represent a C
1
to C
7
aliphatic hydrocarbon or alicyclic compound, R
3
and R
5
independently represent hydrogen or methyl group, R
6
is hydrogen or 2-hydroxyethyl group, p/(p+q+r+s) is from 0.1 to about 0.5, q/(p+q+r+s) is from 0.1 to about 0.5, r/(p+q+r+s) is from 0.0 to about 0.5, and s/(p+q+r+s) is from 0.01 to about 0.5, wherein p+q+r+s=1.0.
In accordance with an additional feature of the present invention, there is provided a resist composition comprising (a) a photosensitive polymer represented by the following formula:
where R
1
is a C
7
to C
20
alicyclic hydrocarbon compound, R
2
and R
4
independently represent a C
1
to C
7
aliphatic hydrocarbon or alicyclic compound, R
3
and R
5
independently represent hydrogen or methyl group, R6 is hydrogen or 2-hydroxyethyl group, p/(p+q+r+s) is from 0.1 to about 0.5, q/(p+q+r+s) is from 0.1 to about 0.5, r/(p+q+r+s) is from 0.0 to about 0.5, and s/(p+q+r+s) is from 0.01 to about 0.5, wherein p+q+r+s=1.0, and (b) a photoacid generator (PAG).
These and other features of the present invention will be readily apparent to those skilled in the art upon review of the detailed description of preferred embodiments which follows.


REFERENCES:
patent: 4999410 (1991-03-01), Mathias et al.
patent: 5247035 (1993-09-01), Besecke et al.
patent: 5354895 (1994-10-01), Besecke et al.
patent: 6080524 (2000-06-01), Choi et al.
Grant et al, *Grant&Hackh's Chemical Dictionary,5th ed., McGraw-Hill Book Company, New York, NY, 1987, pp. 22, 290, 1987.*
Tsuda et al., *Macromolecules,vol. 26, No. 16, Aug. 16, 1993, pp. 4734-4735, Aug. 1993.*
Tsuda et al,Polymer,vol. 35, No. 15, Jul. 1994, pp. 3317-3328.

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