Photoresist trimming process

Details Photoresist trimming process Photoresist trimming process

2005-09-05

2008-11-04

Norton, Nadine (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C156S345420, C216S016000, C216S059000, C438S694000, C438S706000, C438S710000, C438S712000

Reexamination Certificate

active

07445726

ABSTRACT:
A photoresist trimming process is described. An etcher equipped with an etching chamber, a wafer holder, a TCP source and a TCP window is provided. After plasma is generated in the etching chamber, the etching chamber is heated without a wafer therein, and the temperature at the TCP window is monitored simultaneously. It is started, at any time after the temperature at the TCP window reaches a predetermined one, to treat wafers with photoresist layers to be trimmed thereon through the etching chamber.

REFERENCES:
patent: 4825808 (1989-05-01), Takahashi et al.
patent: 5863376 (1999-01-01), Wicker et al.
patent: 2004/0244912 (2004-12-01), Tezuka et al.

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