Photoresist topcoat for a photolithographic process

Details Photoresist topcoat for a photolithographic process Photoresist topcoat for a photolithographic process

2008-07-15

2008-07-15

Lee, Sin J. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S326000, C430S272100, C430S273100, C430S330000, C430S331000

Reexamination Certificate

active

07399581

ABSTRACT:
A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3where m is equal to 8, 10 or 12 and QnMnR1,R2,R3where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.

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Linda Geppert, Chip Making's Wet New World, IEEE Spectrum May 2004, pp. 30-33.

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