Photoresist topcoat for a photolithographic process

Details Photoresist topcoat for a photolithographic process Photoresist topcoat for a photolithographic process

2011-03-22

2011-03-22

Lee, Sin J. (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S326000, C430S270100, C430S330000, C430S331000, C430S272100, C430S273100, C430S271100

Reexamination Certificate

active

07910290

ABSTRACT:
A method of forming an image using a topcoat composition. A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3where m is equal to 8, 10 or 12 and QnMnR1,R2,R3where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.

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