Photoresist suitable for use in 157 nm photolithography and...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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Details

C430S326000, C430S905000, C430S907000

Reexamination Certificate

active

10974726

ABSTRACT:
A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.

REFERENCES:
patent: 6548219 (2003-04-01), Ito et al.
patent: 2002/0102490 (2002-08-01), Ito et al.
patent: 2003/0165773 (2003-09-01), Harada et al.
patent: 2004/0053161 (2004-03-01), Kanna et al.
patent: 2004/0101787 (2004-05-01), Naito et al.
patent: 2004/0166434 (2004-08-01), Dammel et al.
patent: 0 955 562 (1999-11-01), None
patent: 1 319 981 (2003-06-01), None
Dammel et al., “Transparent Resins fro 157 nm Lithography,” pp. 350-360.
Abstract of Patterson et al., “Polymers for 157-nm photoresist applications: a progress report”, Proc. SPIE 3999, pp. 365-374.

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