Photoresist stripping without degrading low dielectric constant

Details Photoresist stripping without degrading low dielectric constant Photoresist stripping without degrading low dielectric constant

1999-06-24

2000-02-29

Kopec, Mark

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438725, 438623, 20419236, H01L 21312, H01L 213065

Patent

active

060309016

ABSTRACT:
Photoresist masks are stripped using a H.sub.2 -N.sub.2 plasma to prevent increasing the dielectric constant of an exposed carbon-containing dielectric material. Embodiments of the present invention include forming a low dielectric constant, carbon-containing layer, e.g., a polymeric layer, on an exposed metal feature overlying a wafer, forming a photoresist mask on the dielectric layer, forming an opening in the dielectric layer exposing the metal feature and a portion of the dielectric layer, preheating the wafer and stripping the photoresist mask using the H.sub.2 -N.sub.2 plasma.

REFERENCES:
patent: 3930913 (1976-01-01), Jacob
patent: 4357203 (1982-11-01), Zelez
patent: 5413963 (1995-05-01), Yen et al.
patent: 5882489 (1999-03-01), Bersin et al.
patent: 5958798 (1999-09-01), Shields

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