Photoresist stripper composition and methods for forming...

Details Photoresist stripper composition and methods for forming... Photoresist stripper composition and methods for forming...

2006-07-25

2010-10-26

McPherson, John A (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Removal of imaged layers

Reexamination Certificate

active

07820368

ABSTRACT:
A photoresist stripper composition, a method for forming wire structures thereby, and a method of fabricating a thin film transistor substrate using the composition. The photoresist stripper composition includes about 50 WT % to about 70 WT % of butyldiglycol, about 20 to about 40 WT % of an alkylpyrrolidone, about 1 WT % to about 10 WT % of an organic amine compound, about 1 to about 5 WT % of aminopropylmorpholine, and about 0.01 to about 0.5 WT % of a mercapto compound.

REFERENCES:
patent: 2000-208773 (2000-07-01), None
patent: 2001-223365 (2001-08-01), None
patent: 2004-163901 (2004-06-01), None
patent: 10-2004-98750 (2004-11-01), None
Patent Abstracts of Japan, Publication No. 2000-208773, Jul. 28, 2000, 1 p.
Patent Abstracts of Japan, Publication No. 2001-223365, Aug. 17, 2001, 1 p.
Patent Abstracts of Japan, Publication No. 2004-163901, Jun. 10, 2004, 2 pp.
Korean Patent Abstracts, Publication No. 1020040098750, Nov. 26, 2004, 1 p.

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