Photoresist, photolithography method using the same, and...

Details Photoresist, photolithography method using the same, and... Photoresist, photolithography method using the same, and...

2005-02-01

2005-02-01

Chu, John S. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S165000, C430S166000, C430S192000, C430S193000

Reexamination Certificate

active

06849391

ABSTRACT:
There is provided a positive photoresist for near-field exposure excellent in light utilization efficiency even with small layer thickness of the photoresist layer for image formation, and allowing for reduced pattern edge roughness, and a photolithography method including a step of exposing by the near-field exposure the photoresist layer for image formation made thereof. In a positive photoresist containing an alkali-soluble novolak resin and a quinone diazide compound, the film thickness of the photoresist at the time of exposure is not larger than 100 nm, and the absorption coefficient of the photoresist α (μm−1) for the exposure light is such that 0.5≦α≦7.

REFERENCES:
patent: 4859563 (1989-08-01), Miura et al.
patent: 6171730 (2001-01-01), Kuroda et al.
patent: 6395447 (2002-05-01), Ishii et al.
patent: 6497996 (2002-12-01), Naya et al.
patent: 7-106229 (1995-04-01), None
patent: 7-319157 (1995-12-01), None
patent: 11-145051 (1999-05-01), None

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