Photoresist pattern fabrication employing chemically amplified m

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430313, 430327, 430331, G03C 516

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active

051088754

ABSTRACT:
The present invention is directed to a method for the formation, partial wet development and dry development of photoresists treated only in a thin layer (i.e., approx. 2000 Angstroms thick) so as to be treated with an organometallic material. Treatment of this thin layer of the resist formulation in the process of the present invention is preferably accomplished by the vapor phase exposure of the resist formulation to an organometallic material such as a silylating compound capable of reacting with the resist formulation. The resist formulation also contains a photoacid generator, capable of releasing an acid which either causes the hydrolysis of the exposed portions of the resist that were created with organometallic vapor, or prevents the reaction of the organometallic vapor with the exposed portion of the resist.

REFERENCES:
patent: 4357369 (1982-11-01), Kilichowski
patent: 4396704 (1983-08-01), Taylor
patent: 4426247 (1984-01-01), Tamamura
patent: 4430153 (1984-02-01), Gleason
patent: 4433044 (1984-02-01), Meyer
patent: 4552833 (1985-11-01), Ito
patent: 4613398 (1986-09-01), Chiong et al.
patent: 4921778 (1990-05-01), Thackeray et al.

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