Photoresist pattern fabrication employing chemically amplified m

Details Photoresist pattern fabrication employing chemically amplified m Photoresist pattern fabrication employing chemically amplified m

1988-07-29

1990-05-01

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430327, 430330, G03C 516

Patent

active

049217780

ABSTRACT:
The present invention is directed to a method for the formation and dry development of photoresists treated only in a thin layer (i.e., approx. 2000 Angstroms thick) so as to be treated with an organometallic material. Treatment of this thin layer of the resist formulation in the process of the present invention is preferably accomplished by the vapor phase exposure of the resist formulation to an organometallic material such as a silylating compound capable of reacting with the resist formulation. The resist formulation also contains a photoacid generator, capable of releasing an acid which either causes the hydrolysis of the exposed portions of the resist that were created with organometallic vapor, or prevents the reaction of the organometallic vapor with the exposed portion of the resist.

REFERENCES:
patent: 4357369 (1982-11-01), Kilichowski et al.
patent: 4396704 (1983-08-01), Taylor
patent: 4426247 (1984-01-01), Tamamura et al.
patent: 4430153 (1984-02-01), Gleason et al.
patent: 4433044 (1984-02-01), Meyer et al.
patent: 4552833 (1985-11-01), Ito et al.
patent: 4613389 (1986-09-01), Tanaka
patent: 4613398 (1986-09-01), Chiong et al.
Visser et al., "Mechanism and Kinetics of Silylation of Resist Layers . . .", Proceedings of SPIE, vol. 771, 1987, pp. 1-7.

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