Photoresist flow during the formation of a semiconductor device

Details Photoresist flow during the formation of a semiconductor device Photoresist flow during the formation of a semiconductor device

1995-02-24

1997-08-12

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438595, 438696, 438760, H01L 21312, H01L 21265, H01L 218234

Patent

active

056565232

ABSTRACT:
A process used during the formation of a semiconductor device comprises the formation of a stack having a substrate, a layer of oxide, a polycrystalline silicon layer, and a photoresist mask. An etch is performed to pattern the polycrystalline silicon layer, then the photoresist is flowed to cover the edges of the polycrystalline silicon. Finally, a doping step is performed using the flowed photoresist as a doping barrier, thus allowing for a distance between the poly and an implanted region in the substrate.

REFERENCES:
patent: 5234868 (1993-08-01), Cote
patent: 5338398 (1994-08-01), Szwejkowski et al.
patent: 5371025 (1994-12-01), Sung
patent: 5395781 (1995-03-01), Wilhoit

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