Photoresist compositions for short wavelength imaging

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

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C430S270100, C430S326000, C430S907000

Reexamination Certificate

active

06858379

ABSTRACT:
New photoresists are provided that are suitable for short wavelength imaging, including sub-200 nm such as 157 nm. In one aspect, resists of the invention comprise a fluorine-containing polymer, a photoactive component, and one or more additional components of an amine or other basic composition, a dissolution inhibitor compound, a surfactant or leveling agent, or a plasticizer material. In another aspect, resists of the invention contain a fluorine-containing resin and one or more photoacid generator compounds, particularly non-aromatic onium salts and imidosulfonates, and other non-ionic photoacid generator compounds.

REFERENCES:
patent: 5738975 (1998-04-01), Nakano et al.
patent: 6468712 (2002-10-01), Fedynyshyn
patent: 6548219 (2003-04-01), Ito et al.
patent: 1 035 441 (2000-09-01), None
patent: 0 880 075 (2001-10-01), None
patent: WO 0067072 (2000-11-01), None
Y. Uetani et al., “Effect of Fluorinated Monomer Unit Introduction to KrF resin system in F2 Lithography”, Proceedings of the SPIE—The International Society for Optical Engineering, vol. 4345, No. 1, Feb. 2001, pp. 379-384.

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