Photoresist composition and method of manufacturing a...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S191000, C430S192000, C430S193000, C430S316000, C430S317000, C430S318000, C430S326000, C438S148000, C438S149000, C438S155000, C438S161000

Reexamination Certificate

active

07955784

ABSTRACT:
A photoresist composition includes about 100 parts by weight of resin mixture including novolak resin and acryl resin and about 10 parts to about 50 parts by weight of naphthoquinone diazosulfonic acid ester. A weight-average molecular weight of the novolak resin is no less than about 30,000. A weight-average molecular weight of the acryl resin is no less than about 20,000. The acryl resin makes up about 1% to about 15% of the total weight of the resin mixture. When a photoresist film formed using the photoresist composition is heated, a profile variation of the photoresist composition is relatively small. Therefore, a residual photoresist film has a uniform thickness, and a short circuit and/or an open defect in a TFT substrate may be reduced.

REFERENCES:
patent: 6641972 (2003-11-01), Misumi et al.
patent: 7291439 (2007-11-01), Park et al.
patent: 2006/0027804 (2006-02-01), Yamazaki et al.
patent: 2006/0188806 (2006-08-01), Lee et al.
patent: 2007/0196962 (2007-08-01), Morisue et al.
patent: 2001-215696 (2000-02-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photoresist composition and method of manufacturing a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoresist composition and method of manufacturing a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoresist composition and method of manufacturing a... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2677498

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.