Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1997-10-08
1999-11-16
Schofer, Joseph L.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
G03C 500
Patent
active
059855223
ABSTRACT:
There is provided a photoresist including (a) a resin composed of a polymer having a compound represented with the following general formula [1] within a structural unit thereof, and (b) a photo acid generator. ##STR1## wherein R.sup.1 represents a hydrogen atom, R.sup.2 represents a divalent hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.3 and R.sup.4 represent a hydrocarbon group having a carbon number of 1 or 2, and R.sup.5 represents one of (a) a hydrocarbon group having a carbon number of 1 to 12, (b) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an alkoxy group having a carbon number of 1 to 12, and (c) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an acyl group having a carbon number of 1 to 13. The above mentioned photoresist produces no extra polymer by side reaction. Thus, the photoresist makes it possible to form a fine pattern without resist residue, and has superior thermal stability.
REFERENCES:
H. Ito et al; "Applications of Photoinitiators to the Design of Resists for Semiconductor Manufacturing"; Polymers in Microelectronics; American Chemical Society (1984); pp. 11-23.
K. Nakano et al.; "Positive Chemically Amplified Resist for ArF Excimer Laser Lithography . . . Terpolymer"; SPIE, vol. 2438; pp. 433-444.
R.D. Allen et al.; "Single Layer Resists with Enhanced Etch Resistance for 193 nm Lithography"; Journal of Photopolymer Science and Technology, vol. 7, No. 3 (1994); pp. 507-516.
T. Sakamizu et al.; "Acid-Catalyzed Reactions of Tetrahydropyranyl-Protected Polyvinylphenol in a Novolak-Resin-Based Positive Resist"; Jpn. J. Appl. Phys., vol. 31 (1992), pp. 4288-4293.
O. Nalmasu et al.; Development of a Chemically Amplified Positive (CAMP) Resist Material for Single Layer Deep-UV Lithography; SPIE, vol. 1262 Advances in Resist Technology and Processing VII (1990), pp. 32-48.
T. Ueno et al; "Chemical Amplification Positive Resist Systems Using Novel Sulfonates as Acid Generators"; Proceedings of PME'89 (1990), pp. 413-424.
R. D. Allen, G. M. Wallraff, R. A. Depieto, D. C. Hofer, and R. R. Kunz; Journal of Photopolymer Science and Technology 7 (3), 507-516, 1994.
Hasegawa Etsuo
Iwasa Shigeyuki
Maeda Katsumi
Nakano Kaichiro
Ohfuji Takeshi
Cheng Wu C.
NEC Corporation
Schofer Joseph L.
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