In situ removal of contaminants from the interior surfaces of an

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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2504922, H01J 3736

Patent

active

055548547

ABSTRACT:
An in situ method of removing contaminant material adhering to interior surfaces of an ion beam implanter is disclosed. The method includes the steps of: extracting ions from source materials and forming the ions into an ion beam that traverses a beam path through an evacuated region to an ion implantation chamber; providing a control means for controlling a trajectory of the ion beam within the evacuated region; utilizing the control means to direct the ion beam to strike interior surfaces of the ion beam implanter in contact with the evacuated region to dislodge the contaminant material; and removing the contaminant material from the evacuated region of the implanter.

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Materials Research Corporation, "The Basics of Plasma," Hinson, Copyright 1984, pp. 1-36.

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