Photonic integrated device using reverse-mesa structure and...

Details Photonic integrated device using reverse-mesa structure and... Photonic integrated device using reverse-mesa structure and...

2007-10-30

2007-10-30

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S039000, C438S040000, C257SE33010

Reexamination Certificate

active

10991614

ABSTRACT:
A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplifier, and a photo detector are integrated, a first conductive clad layer and an active layer sequentially formed on the first conductive substrate in the form of a mesa structure, a second conductive clad layer formed on the active layer in the form of a reverse-mesa structure, an ohmic contact layer formed on the second clad layer in such a manner that the ohmic contact layer has a width narrower than the width of an upper surface of the second conductive clad layer, a current shielding layer filled in a sidewall having a mesa and reverse-mesa structure, and at least one window area formed between the above elements.

REFERENCES:
patent: 5543353 (1996-08-01), Suzuki et al.
patent: 6187515 (2001-02-01), Tran et al.
patent: 6821801 (2004-11-01), Sato et al.
Stanley Wolf Ph.D. and Richard N. Tauber Ph.D. in Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, 1986, pp. 539-542.

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