Photon-blocking layer

Details Photon-blocking layer Photon-blocking layer

2005-11-15

2005-11-15

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S435000

Reexamination Certificate

active

06965136

ABSTRACT:
An embodiment of the invention is a method to reduce light induced corrosion and re-deposition of a metal,8, (such as copper) that is used to make the interconnect wiring during the semiconductor manufacturing process. The light induced corrosion and re-deposition is caused by the exposure of a P-N junction to light, causing a photovoltaic effect. A photon-blocking layer,13, is used in the invention to reduce the amount of exposure of the P-N junction to light. The photon blocking layer,13, of the invention may be a direct band-gap material with a band-gap energy that is less than the lower edge of the energy spectrum of a typical light source used in the semiconductor manufacturing facility (typically less than 1.7 eV).

REFERENCES:
patent: 6251787 (2001-06-01), Edelstein et al.
patent: 6630736 (2003-10-01), Ignaut
patent: 6738538 (2004-05-01), Antaki et al.
A. Beverina et al., “Copper Photocorrosion Phenomenon During Post CMP Cleaning”Electrochemical and Solid-State Letters,pp. 156-158, 2000.
Yoshio Homma et al., “Control of Photocorrosion in the Copper Damascene Process”Journal of the Electrochemical Society,pp. 1193-1198, 2000.

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