Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2006-05-23
2009-12-08
Huff, Mark F (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S311000, C359S562000
Reexamination Certificate
active
07629087
ABSTRACT:
A photomask according to the invention provides selective regional optimization of illumination type according to the type of image being formed using the photomask. The photomask include a light polarizing structure which polarizes the light incident on the polarizing structure. Light of a first illumination type from a source in a photolithographic exposure system is incident on the photomask. A portion of the light is incident on the region of the photomask that includes the polarizing structure, and another portion of the light is incident on another region of the photomask that does not include a polarizing structure. The illumination type of the light incident on the polarizing structure is changed to a second illumination type such that light incident on a substrate such as an integrated circuit wafer from the region of the photomask that has the polarizing structure is of the second illumination type. The illumination type of the portion of the light that is not incident on the polarizing structure is not changed, such that light from that portion of the photomask incident on another region of the wafer is of the first illumination type. By selectively regionally controlling illumination type in the photolithography process, resolution of the exposure system is optimized in all regions of the wafer.
REFERENCES:
patent: 5245470 (1993-09-01), Keum
patent: 5459000 (1995-10-01), Unno
patent: 5541026 (1996-07-01), Matsumoto
patent: 5624773 (1997-04-01), Pforr et al.
patent: 5703675 (1997-12-01), Hirukawa et al.
patent: 5808796 (1998-09-01), Kang et al.
patent: 6077631 (2000-06-01), Unno
patent: 6249335 (2001-06-01), Hirukawa et al.
patent: 6496239 (2002-12-01), Seiberle
patent: 6866968 (2005-03-01), Shin et al.
patent: 2002/0068227 (2002-06-01), Wang et al.
patent: 2002/0197541 (2002-12-01), Grobman et al.
patent: 2004/0010385 (2004-01-01), Fukuhara et al.
patent: 2004/0161677 (2004-08-01), Nakao
patent: 2004/0161678 (2004-08-01), Misaka
patent: 2004/0263816 (2004-12-01), Van Dam
patent: 2006/0177745 (2006-08-01), Huh et al.
patent: 08-110630 (1996-04-01), None
patent: 2001-272764 (2001-10-01), None
Huh Sung-min
Jeon Chan-uk
Kim Hee-bom
Lee Dong-gun
Fraser Stewart A
Huff Mark F
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
LandOfFree
Photomask, method of making a photomask and photolithography... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photomask, method of making a photomask and photolithography..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photomask, method of making a photomask and photolithography... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4129976