Photomask blank and method of fabricating a photomask from...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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07371484

ABSTRACT:
A photomask blank includes a hard mask having an excellent etch selectivity with respect to an opaque layer. The photomask blank includes a light-transmissive substrate, an opaque chromium layer disposed on the light-transmissive substrate, and a hard mask layer disposed on the opaque chromium layer. The hard mask layer is of a conductive material having an etch selectivity of at least 3:1 with respect to the opaque chromium layer against an etch gas mixture including chlorine gas and oxygen gas. Also, a resist layer is disposed on the hard mask layer. Alternatively, a phase shift layer can be interposed between the light-transmissive substrate and the opaque chromium layer. Preferably, the hard mask layer is formed of Mo or MoSi. First, the resist layer is patterned, and the hard mask is etched using the patterned resist as an etch mask. Then the chromium layer is etched using the patterned hard mask as an etch mask.

REFERENCES:
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patent: 6472107 (2002-10-01), Chan
patent: 6544696 (2003-04-01), Westerman et al.
patent: 6641958 (2003-11-01), Inazuki et al.
patent: 7011910 (2006-03-01), Shiota et al.
patent: 2003/0013023 (2003-01-01), Chan
patent: 1998-039477 (1998-08-01), None
patent: 1020010008631 (2001-02-01), None
patent: 1020010018495 (2001-03-01), None

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