Photomask and pattern forming method

Details Photomask and pattern forming method Photomask and pattern forming method

2005-12-20

2005-12-20

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

Reexamination Certificate

active

06977133

ABSTRACT:
A photomask is used for transferring a mask pattern onto a semiconductor substrate. The mask pattern includes a junction at which two line patterns are connected to each other with one line pattern being orthogonal to the other line pattern so as to form a T-shape, or a proximity portion at which two line patterns are located close to each other with one line pattern being substantially orthogonal to the other line pattern so as to form a T-shape. A small pattern is formed on a side edge of the line pattern in the vicinity of the junction or the proximity portion so as to form a wide portion of the line pattern. The small pattern is provided within the range between 0.79 and 1.8 λ/(NA·K) of a distance from the neighboring side edge of the other line pattern, where λ is the wavelength of exposure illumination light, NA is the numerical aperture of a lens used, and K is a transfer reduction ratio.

REFERENCES:
patent: 6638664 (2003-10-01), Hsieh et al.
patent: 3-89347 (1991-04-01), None
patent: 5-67550 (1993-03-01), None
patent: 2002-6475 (2002-01-01), None

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