Photolithography scheme using a silicon containing resist

Details Photolithography scheme using a silicon containing resist Photolithography scheme using a silicon containing resist

2005-11-22

2005-11-22

Walke, Amanda (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S317000, C430S323000, C430S270100, C438S690000, C438S706000, C438S710000, C438S712000

Reexamination Certificate

active

06967072

ABSTRACT:
A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.

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