Photolithography process with gas-phase pretreatment

Details Photolithography process with gas-phase pretreatment Photolithography process with gas-phase pretreatment

1998-09-01

2000-12-19

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430323, G03F 726, G03F 738

Patent

active

061625914

ABSTRACT:
The present invention discloses a photolithography process with a gas-phase pretreatment before the development of photoresist to increase the depth of focus (DOF) of an isolated-line pattern on a substrate. A photoresist layer is coated on a substrate by using spin-on technology. Then, an exposure process is performed on the photoresist layer through a reticle to transfer a pattern of the reticle to the photoresist layer. Additionally, a gas-phase pretreatment is performed on the photoresist layer before or after the exposure process to harden the surface of the photoresist layer. Finally, a developing process is performed to form a pattern on the substrate.

REFERENCES:
patent: 5292623 (1994-03-01), Kemp
patent: 5407786 (1995-04-01), Ito

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