Photodiodes and image sensors including the same

Details Photodiodes and image sensors including the same Photodiodes and image sensors including the same

2007-10-15

2010-06-29

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S454000, C257S461000

Reexamination Certificate

active

07745861

ABSTRACT:
Example embodiments may provide a photodiode formed of semiconductor silicide and/or an image sensor using a photodiode formed of semiconductor silicide. The photodiode may have a p-n junction structure including a p-type semiconductor silicide and an n-type semiconductor silicide. The image sensor may include a substrate, a photodetector unit having the photodiode, which may perform photoelectric transformation, and/or a signal transmitter transmitting a signal generated by the photodetector unit to an output unit. The photodetector unit and/or the signal transmitter may be integrated in the substrate.

REFERENCES:
patent: 5009717 (1991-04-01), Komabayashi et al.

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