Photodiode and method of manufacturing the same

Details Photodiode and method of manufacturing the same Photodiode and method of manufacturing the same

2007-03-13

2007-03-13

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S290000, C257S291000, C257SE27130, C257SE27133, C257SE27135

Reexamination Certificate

active

11002832

ABSTRACT:
A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and an etching blocking layer on the junction structure, forming an interlayer insulating layer and an intermetal insulating layer and an interconnecting structure, exposing the etching blocking layer by etching the intermetal insulating layer and the interlayer insulating layer, removing a portion of the etching blocking layer and the buffer oxide layer of the light-receiving unit by dry etching, and exposing a semiconductor surface of the light-receiving unit by wet etching.

REFERENCES:
patent: 6521920 (2003-02-01), Abe
patent: 6525351 (2003-02-01), Yoshida
patent: 6677627 (2004-01-01), Miida
patent: 6809359 (2004-10-01), Yamada
patent: 2002-190587 (2002-07-01), None
patent: 2003-163344 (2003-06-01), None
patent: P1993-0011308 (1993-06-01), None
patent: 2003-002018 (2003-01-01), None

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