Photodetector for backside-illuminated sensor

Details Photodetector for backside-illuminated sensor Photodetector for backside-illuminated sensor

2007-05-24

2010-02-02

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

Reexamination Certificate

active

07656000

ABSTRACT:
A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a gate that includes a reflective layer.

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Chinese Office Action issued Mar. 20, 2009, Application No. 2007101487965.

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