Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-05-10
2011-05-10
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
Reexamination Certificate
active
07939903
ABSTRACT:
A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a metal gate that includes a reflective layer.
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Chinese Office Action issued Mar. 20, 2009, Application No. 2007101487965, 4 pages.
Hsu Tzu-Hsuan
Wang Ching-Chun
Yaung Dun-Nian
Haynes and Boone LLP
Nguyen Dao H
Nguyen Tram H
Taiwan Semiconductor Manufacturing Company , Ltd.
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