Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-08
2011-03-08
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S077000, C257S344000, C257S408000, C257SE29277
Reexamination Certificate
active
07902576
ABSTRACT:
A method (10) of forming a transistor (100) includes treating (12) at least some of a semiconductor substrate (102) with carbon and then forming (18) a gate structure (114) over the semiconductor substrate. A channel region (122) is thereby being defined within the semiconductor substrate (102) below the gate structure (114). Source and drain regions (140, 142) are then formed (26) within the semiconductor substrate (102) on opposing sides of the channel (122) with a phosphorus dopant.
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Chakravarthi Srinivasan
Chidambaram P.R.
Brady III Wade J.
Diaz José R
Garner Jacqueline J.
Parker Kenneth A
Telecky , Jr. Frederick J.
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