Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-12
2007-06-12
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21051
Reexamination Certificate
active
10998472
ABSTRACT:
Integrated circuit field effect transistors are manufactured by forming a pre-active pattern on a surface of a substrate, while refraining from doping the pre-active pattern with phosphorus. The pre-active pattern includes a series of interchannel layers and channel layers stacked alternately upon each other. Source/drain regions are formed on the substrate, at opposite ends of the pre-active pattern. The interchannel layers are then selectively removed, to form tunnels passing through the pre-active pattern, thereby defining an active channel pattern including the tunnels and channels including the channel layers. The channels are doped with phosphorus after selectively removing the interchannel layers. A gate electrode is then formed in the tunnels and surrounding the channels.
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Geyer Scott B.
Isaac Stanetta
Myers Bigel Sibley & Sajovec P.A.
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