Phase shifting mask, manufacturing method thereof, and exposure

Details Phase shifting mask, manufacturing method thereof, and exposure Phase shifting mask, manufacturing method thereof, and exposure

1997-09-09

1999-01-12

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430324, G03F 900

Patent

active

058586253

ABSTRACT:
A quartz substrate includes a first light transmitting portion and a second light transmitting portion which transmit exposure light. The first and second light transmitting portions are formed such that exposure light transmitted through respective light transmitting portions are 180.degree. out of phase with each other. A semi-light shielding film is located between first and second light transmitting portion and formed in a part of first and second light transmitting portions. Also, semi-light shielding film has transmittance of at least 3% and not more than 30%.

REFERENCES:
patent: 5219686 (1993-06-01), Kamon
patent: 5286581 (1994-02-01), Lee
patent: 5411823 (1995-05-01), Okamoto
"Phase-Shifting Mask Strategies: Isolated Dark Lines," Levenson, Microlithography World, Mar./Apr. 1992, pp. 6-12.
"The Effect of Duty of Ratio of line and Space in Phase-Shifting Lithography," Miyazaki et al., Proc. of SPIE vol. 1927, 55, pp. 677-685.

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