Phase random access memory with high density

Details Phase random access memory with high density Phase random access memory with high density

2005-09-13

2005-09-13

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S002000, C257S003000, C257S004000, C315S101000, C315S105000, C315S163000, C365S101000, C365S102000, C365S103000, C365S104000, C365S105000, C365S163000

Reexamination Certificate

active

06943395

ABSTRACT:
A phase random access memory including a plurality of access transistors, each access transistor including a drain region, and a phase-changeable film shared by the plurality of access transistors. The phase-changeable film is connected to a bitline through a first electrode and connected to each respective drain region through at least one of a plurality of second electrodes.

REFERENCES:
patent: 6750469 (2004-06-01), Ichihara et al.

Affiliated with

Also associated with

Rating

Phase random access memory with high density does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase random access memory with high density, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase random access memory with high density will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3379710