Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-02-28
2008-12-09
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S209000, C257S211000, C257S246000, C257S247000, C257S248000, C257S249000, C257S529000, C257S758000, C257S759000, C257S760000, C257S904000
Reexamination Certificate
active
07462900
ABSTRACT:
Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that may include nitrogen atoms and/or silicon atoms. First and second electrodes are electrically connected to the phase-changeable material pattern and provide an electrical signal thereto. The phase-changeable material pattern may have a polycrystal line structure.
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Ha Yong-Ho
Hideki Horii
Kuh Bong-Jin
Park Jeong-hee
Yi Ji-Hye
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Soward Ida M
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