Phase changeable memory devices including carbon nano tubes

Details Phase changeable memory devices including carbon nano tubes Phase changeable memory devices including carbon nano tubes

2008-05-27

2008-05-27

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S302000

Reexamination Certificate

active

07378701

ABSTRACT:
An integrated circuit phase changeable memory device includes an integrated circuit substrate, a first electrode on the integrated circuit substrate, and a second electrode on the integrated circuit substrate and spaced apart from the first electrode. A carbon nano tube and a phase changeable layer are serially disposed between the first and second electrodes. An insulating layer can include a contact hole and the carbon nano tube may be provided in the contact hole. Moreover, the phase changeable layer also may be provided at least partially in the contact hole. A layer also may be provided at least partially surrounding the carbon nano tube in the contact hole. Related fabrication methods also are provided.

REFERENCES:
patent: 2004/0166604 (2004-08-01), Ha et al.
patent: 10-0393189 (2002-07-01), None

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