Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2005-12-12
2009-02-03
L., D. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000, C365S100000, C365S113000
Reexamination Certificate
active
07486536
ABSTRACT:
Disclosed is a phase-changeable memory device and method of programming the same. The phase-changeable memory device includes memory cells each having multiple states, and a program pulse generator providing current pulses to the memory cells. The program pulse generator initializes a memory cell to a reset or set state by applying a first pulse thereto and thereafter provides a second pulse to program the memory cell to one of the multiple states. According to the invention, as a memory cell is programmed after being initialized to a reset or set state, it is possible to correctly program the memory cell without influence from the previous state of the memory cell.
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Kim Du-Eung
Kim Hye-Jin
Lee Kwang-Jin
Ro Yu-hwan
L. D.
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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