Static information storage and retrieval – Read/write circuit – Particular write circuit
Reexamination Certificate
2007-09-12
2009-08-11
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Read/write circuit
Particular write circuit
C365S189120, C365S201000, C365S225700, C365S148000, C365S163000
Reexamination Certificate
active
07573758
ABSTRACT:
A PRAM and programming method are disclosed. The PRAM includes a memory cell array including a test cell, a write driver applying a program pulse and providing a program current to the memory cell array, a sense amplification and verification circuit reading data programmed in the memory cell array and performing a program verify operation on the data, and a program loop control unit storing program verification result for the test cell at each program loop during test operation and generating the program pulse according to the program verification result to control the start of the program loop during normal operation.
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Kim Du-Eung
Park Joon-Min
Samsung Electronics Co,. Ltd.
Tran Andrew Q
Volentine & Whitt PLLC
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