Phase change random access memory (PRAM) device having...

Details Phase change random access memory (PRAM) device having... Phase change random access memory (PRAM) device having...

2005-12-29

2008-11-25

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S203000

Reexamination Certificate

active

07457151

ABSTRACT:
A phase change memory device of one aspect includes a memory array including a plurality of phase change memory cells, a write boosting circuit, and a write driver. The write boosting circuit boosts a first voltage and outputs a first control voltage in response to a control signal in a first operation mode, and boosts the first voltage and outputs a second control voltage in response to the control signal in a second operation mode and a third operation mode. The write driver is driven by the first control voltage in the first operation mode and writes data to a selected memory cell of the memory array.

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