Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2005-12-29
2008-11-25
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000, C365S203000
Reexamination Certificate
active
07457151
ABSTRACT:
A phase change memory device of one aspect includes a memory array including a plurality of phase change memory cells, a write boosting circuit, and a write driver. The write boosting circuit boosts a first voltage and outputs a first control voltage in response to a control signal in a first operation mode, and boosts the first voltage and outputs a second control voltage in response to the control signal in a second operation mode and a third operation mode. The write driver is driven by the first control voltage in the first operation mode and writes data to a selected memory cell of the memory array.
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Cho Woo-yeong
Kang Sang-beom
Kim Du-eung
Kwak Choong-keun
Nguyen Van-Thu
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
Yang Han
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